Silicon Carbide: Classical and Quantum Technologies

816. WE-Heraeus-Seminar

28 Jul - 31 Jul 2024


Physikzentrum Bad Honnef

Scientific organizers:

Dr. Florian Kaiser, Luxembourg Institute of Science and Technology, Belvaux/Luxemburg • Dr. Petr Siyushev, U Hasselt/Belgium • Dr. Vadim Vorobyov, U Stuttgart/Germany

Silicon carbide (SiC) is today’s leading third-generation semiconductor, and the first to demonstrate a light emitting diode. Its extraordinary thermo-electric properties made it the dominating semiconductor for high power electronics, such as electric mobility. Since more than ten years, the SiC industry continues growing at an annual rate of 30%, and more than 70% global market share is held by STMicroelectronics and Infineon. This makes silicon carbide one of the very few semiconductors in which Europe is  competitive. The continued research on improving “classical” SiC material production and fabrication has propelled the creation of a new valorisation pathway: The emerging field of SiC “quantum” technologies. Especially in the last 5 - 10 years, colour centres in SiC have shown a disruptive potential across all relevant fields in quantum technologies.

This seminar brings together the leading experts in SiC quantum and classical technologies, including partners from academia, RTOs, and industry. This will improve the general understanding between cross-border fields and develop new synergies and joint efforts to accelerate the development of the SiC quantum-classical technology branch. The seminar also serves as a platform for setting up a white paper to inform policy makers about the unique opportunities offered by the SiC platform. Since this conference unites partners from highly diverse backgrounds, it provides early-stage researchers an ideal platform to obtain a holistic overview on career possibilities.

The conference language will be English. The Wilhelm and Else Heraeus-Foundation bears the cost of full-board accommodation for all participants.