Silicon Carbide: Device Integration for Quantum Technologies

Developing quantum technologies is a top global research priority. Recently, silicon carbide 
(SiC) has emerged as a next-generation CMOS-compatible platform, combining state-of-the-art photonics, electrical control with optically active solid-state defects (“color 
centers”) that can be used as quantum bits.  

In this WE-Heraeus seminar, we will explore the opportunities and challenges related to the integration of color centers into photonic and electronic nanofabricated devices, a key topic 
in scaling this platform. The program spans materials science, nanofabrication, photonics, 
electronics, and quantum sensing, combining perspectives from leading figures in academia, industry, and policy.  

Early-career researchers will be at the heart of the event, with numerous contributed talks 
and a dynamic poster session. The seminar aims not only to share the latest advances but 
also to forge new collaborations, strengthen global networks, and align efforts between 
silicon carbide defect physics and device engineering. 

By fostering synergy between established industries and the rapidly growing quantum field, this meeting will help define the roadmap toward large-scale, practical silicon carbide-based quantum technologies. 

The conference language will be English. The Wilhelm and Else Heraeus-Foundation bears the cost of full-board accommodation for all participants.